iosr-JEEE   Volume-17 ~ Issue-5 ~ Sep. – Oct. 2022

Abstract: Bangladesh is thriving to become a developed nation by 2041 from a middle income country and to make this happen there is no alternative to provide uninterrupted electricity supply. The power sector transformation was taking place for last few decades and currently 97 percent of the population has the access to electricity. The policies to support the power sector is well proven but a constant upgrading and reformation is important according to the increasing demand. In this paper an overview of power sector is discussed and a future prospects of power sector is studied to know where the country stands right now. This paper focuses on the plans to incorporate more renewable energy in the grid and reduce the dependency on natural fuels. The whole world is facing shortage of natural gas and oil and in this situation a detailed study of the power system is needed to support the constant power supply as it has the greatest impact on other fields like agriculture, education in a country like Bangladesh.

Key words: Fossil Fuels, Renewable Energy, Micro Grid, Transmission, Distribution, Generation

[1]. Islam, M.M., Irfan, M., Shahbaz, M. and Vo, X.V., 2022. Renewable and non-renewable energy consumption in Bangladesh: The relative influencing profiles of economic factors, urbanization, physical infrastructure and institutional quality. Renewable Energy, 184, pp.1130-1149.
[2]. Haque, M.A., 2020. Bangladesh Power Sector: An Appraisal from a Multi-Dimensional Perspective (Part-1). EBL Securities Ltd., Dhaka.
[3]. Uddin, M.N., Rahman, M.A., Mofijur, M., Taweekun, J., Techato, K. and Rasul, M.G., 2019. Renewable energy in Bangladesh: status and prospects. Energy Proc 160: 655–661.
[4]. Worldmeter, Bangladesh natural gas. https://www.worldometers.info/gas/bang ladesh-natural-gas/, 2021
[5]. Raihan, A., Muhtasim, D.A., Farhana, S., Pavel, M.I., Faruk, O., Rahman, M. and Mahmood, A., 2022. Nexus between carbon emissions, economic growth, renewable energy use, urbanization, industrialization, technological innovation, and forest area towards achieving environmental sustainability in Bangladesh. Energy and Climate Change, 3, p.100080.

Abstract: This research study presents a new method of determining the metal work function and the electron affinity ofsemiconductor crystal surface through Metal-Insulator-Semiconductor characterization with amorphous thermal silicon dioxide as the insulator. The method gives precise value for the electron affinity of Si as 4.1 eV which is very close to the reported value of 4.05 eV. The metal work functions obtained by this method for Al and Mg are a bit lower and the reasons are discussed in the discussion section. The Al work function comes out to be 3.9 to 4.02 eV by this method and the reported value is 4.20±0.05 eV in the studies by another research group. The work function of Au obtained the new method is exactly as reported at 5.3 eV.

Key words: Electron Affinity, Work function, MOS, Metals, Semiconductors, Tunnelling

[1]. E.H. Nicollian, J.R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology, John Wiley and Sons, New York, 1982.
[2]. D.J. DiMaria, M.V. Fischetti, E. Tierney, "Direct observation of the threshold for electron heating in silicon dioxide", Physical Review Letters, 1986;56(12):1284-1286.
[3]. R.K. Chanana, "On the ionization in silicon dioxide of a MOS device and its relation to the density of the oxide", IOSR-J. Appl. Phys., 2020;12(6):1-5.
[4]. M. Lenzlinger and E.H. Snow, "Fowler-Nordheim tunnelling into thermally grown SiO2", J. Appl. Phys.,1969;40(1):278-283.
[5]. Richard Williams, "Photoemission of electrons from silicon into silicon dioxide", Physical Review, 1965;140(2A):569-575.

Abstract: The number of vulnerable embedded computing devices connected to internet have exploded recently as a plethora of low-cost Internet-of-Things (IOT) products have reached the marketplace. This shifting technological paradigm presents a possibility of life-threatening scenarios due to insecure design frameworks. This report focuses on highlighting the attack vectors that can be exploited and discusses some research direction being pursued by researchers which can help in mitigating the eminent threat posed due to the boom of IoT devices.

Key words: Internet of Things, Cloud offloading, Intrusion detection systems, Vulnerabilities & Mitigation.

[1]. C. Kolias, A. Stavrou, and J. Voas. Securely making ‖things‖ right. Computer, 48(9):84–88, Sept 2015.
[2]. Rolf H. Weber. Internet of things – new security and privacy challenges. Computer Law and Security Review, 26(1):23 – 30, 2010.
[3]. S. Ray, Y. Jin, and A. Raychowdhury. The changing computing paradigm with internet of things: A tutorial introduction. IEEE Design Test, 33(2):76–96, April 2016.
[4]. Jenalea Howell. Number of connected iot devices will surge to 125 billion by 2030, ihs markit says - ihs technology, Oct 2017.
[5]. Justin Baker. Internet of everything: The iot market is projected to expand 12x from 2017–2023, Oct 2017

Abstract: The regenerative braking system (RBS) is recognized as an effective way to recover the released energy while reducing vehicle brake emissions. Traditional brakes typically use friction between two pressed surfaces (brake pads) to convert the kinetic energy of a moving object into heat, all of which is dissipated here in the form of heat energy. Regenerative braking can convert much of this kinetic energy into electrical energy and store it for later use. This process is based on the principle of converting the kinetic energy generated by the mechanical energy of the.......

Keywords: Regenerative braking systems (RBS), Electric vehicle, Kinetic energy, Electrical energy

[1]. Yanan, G., 2016. Research on Electric Vehicle Regenerative Braking System and Energy Recovery. International Journal of Hybrid Information Technology, Volume-9(Issue-1), pp.81 - 90.
[2]. Clegg, S, J., 1996. A Review of Regenerative Braking Systems. Institute of Transport Studies, University of Leeds, Working Paper 471.
[3]. Bhandari, P., Dubey, S., Kandu, S. and Deshbhratar, R., 2017. Regenerative Braking Systems (RBS). International Journal of Scientific & Engineering Research, Volume-8(Issue-2).
[4]. GÜNEY, B. and KILIÇ, H., 2020. Research on Regenerative Braking Systems: A Review. International Journal of Science and Research (IJSR), Volume-9(Issue-9).
[5]. J, M. and M, A., 2019. Regenerative Braking Systems (RBS) (Future of Braking Systems). International Journal of Psychosocial Rehabilitation, 23(4), pp.206-213.

Abstract: This research study presents a new method of determining the metal work function and the electron affinity ofsemiconductor crystal surface through Metal-Insulator-Semiconductor characterization with amorphous thermal silicon dioxide as the insulator. The method gives precise value for the electron affinity of Si as 4.1 eV which is very close to the reported value of 4.05 eV. The metal work functions obtained by this method for Al and Mg are a bit lower and the reasons are discussed in the discussion section. The Al work function comes out to be 3.9 to 4.02 eV by this method and the reported value is 4.20±0.05 eV in the studies by another research group. The work function of Au obtained the new method is exactly as reported at 5.3 eV.

Keywords: Electron Affinity, Work function, MOS, Metals, Semiconductors, Tunnelling

[1]. E.H. Nicollian, J.R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology, John Wiley and Sons, New York, 1982.
[2]. D.J. DiMaria, M.V. Fischetti, E. Tierney, "Direct observation of the threshold for electron heating in silicon dioxide", Physical Review Letters, 1986;56(12):1284-1286.
[3]. R.K. Chanana, "On the ionization in silicon dioxide of a MOS device and its relation to the density of the oxide", IOSR-J. Appl. Phys., 2020;12(6):1-5.
[4]. M. Lenzlinger and E.H. Snow, "Fowler-Nordheim tunnelling into thermally grown SiO2", J. Appl. Phys.,1969;40(1):278-283.
[5]. Richard Williams, "Photoemission of electrons from silicon into silicon dioxide", Physical Review, 1965;140(2A):569-575.

Abstract: This research study theoretically finds the properties of a MOS device on 3C-SiC semiconductor having a cubic crystal structure, and showing an anomaly of having a very high intrinsic defects density of
about 1.8 x 1033/cm3 in the [100] direction in the form of stacking faults. The properties are found without fabricating the device purely based on an electron particle physics concept that relates to the properties of the MOS device. The experimental longitudinal electron effective mass found by the cyclotron resonance is 5 times larger at 0.34m for one out of two conduction valleys in the [100] direction than the effective mass due to the band structure at 0.06m. The study also gives two ways of finding the intrinsic Fermi level Ei below the conduction band in 3C-SiC (100) oriented semiconductor.

Keywords: Metal-Oxide-Semiconductor, Silicon Carbide, Intrinsic Defects, FN-Tunnelling

[1]. R.K. Chanana, "Theoretical finding of the properties of a Si (100) MOS device", IOSR-J. Applied Physics, 14(3), 5-6 (2022).
[2]. R.K. Chanana, "N-channel 4H-SiC MOSFET device on (112􀴤 0) oriented epitaxial surface", IOSR-J. Electrical and Electronics Engineering, 17(3), 20-22 (2022).
[3]. R.K. Chanana, "Linear model for the variation of semiconductor bandgap with high temperature for high temperature electronics", IOSR-J. Electrical and Electronics Engg., 16(6), 5-8 (2021).
[4]. S.M. Sze, "Carrier Transport Phenomenon" in "Semiconductor Devices, Physics and Technology", John Wiley and Sons, Toronto, 30-69 (1985)..

Abstract: Thispaper proposes to simplify the diagnosis of a case study of harmonic compensation, applied to the electrical installation of a Seed Processing Plant, which is in the central region of the State of Sinaloa, Mexico, through a spreadsheet that facilitates defining the magnitude of the problem, and informed decision making through the validation of devices with the potential to reduce this problem. Seeking to reach students and engineers interested in the subject to apply it in the redesign and provide solutions in the educational and / or business field......

Keywords: Power quality, capacitive compensation, harmonic content, passive filtering, non-linear circuit

[1]. IEEE. (1992). Recommended Practices and Requirements for Harmonic Control in Electrical Power Systems. IEEE Std 519-1992. NU. Retrieved November 2, 2020, from https://edisciplinas.usp.br/pluginfile.php/1589255/mod_resource/content/1/IEEE-519-1992.pdf
[2]. IEEE. (1995). Recommended Practice for Monitoring Electric Power Quality. IEEE Std 1159-1995. NY: The Institute of Electrical and Electronics Engineers, Inc.
[3]. IEEE. (2000). The Authoritative Dictionary of IEEE Standards Terms, IEEE Std 100. New York: IEEE Press publications.
[4]. IEEE. (2003). Guide for Application and Specification of Harmonic Filters. IEEE Std 1531-2003. (I. P. Society, Ed.) NY: The Institute of Electrical and Electronics Engineers, Inc.
[5]. Perez Abril, I. (2012). Calculation of parameters of passive harmonic filters. Energy Engineering, XXXIII(2), 134-143..