iosr-JEEE   Volume-18 ~ Issue-3 ~ May – June 2023

Abstract: The Inverted Pendulum(IP) systems are the benchmark problems in control literature. The general control strategy is the feedback control system, which can be used to measure continuously the angle of the pendulum, thereby commanding the cart to move to and fro so that the pendulum will be balanced in the upright position. Though there are control simulations with experimentation available, about half century back, the robust control studies with IP have gained remarkable attention only in the last two or three decades. The robust techniques like𝐻∞, μ-Synthesis, SMC, LTR, Lyapunov approach etc. are mentioned here. Control experimentation with IP related studies based on robust point of view is very essential since the growing importance of robust techniques in control system community. The proposed paper is a brief survey of the so called literature mentioned in the past three or four years

Key words: Inverted Pendulum, balancing, robust control,𝐻∞, stabilization

[1]. M. Yadav, A.K Gupta, B. Pratap and S. Saini; "Robust control design for Inverted Pendulum System with uncertain disturbances", IEEE, 1st International Conference on Power Electronics, Intelligent Control and Energy Systems(ICPEICES), 2016
A. K. Singh, D. K. Chaturvedi and N. K. Pal; "Design of a robust controller for Inverted Pendulum", International Journal of Computer Applications(0975 – 8887); Vol-112, No: 16, 2015
[2]. P. Jekan and C. Subramani, "Robust Control design of Rotary Inverted Pendulum balance," Indian Journal of Science and Technology, Vol 9, Issue-28, pp 1-5, 2016
[3]. N. Singh and K. Bangal, "Robust Control of Double Inverted Pendulum System", Journal of Automation and Control Engineering, Vol 5, No:1, June 2017
A. Ashfahanil, G Bangga, S. Budiprayitne, A. Yullanto and D. Ratnasari, " Constrained H∞/ LTR Control Design for a mobile", AIP, Conference Proceedings, 2017
[4]. I Chawla and A. Singla, "Real-time Control of a Rotary Inverted Pendulum using Robust LQR-based ANFIS Controller", IJNSNS, 19(3-4), 379-389, 2018
[5]. M. Ashok Kumar and S. Kanthalakshmi, "H∞- tracking control for an Inverted Pendulum System," Journal of Vibration and Control, SAGE Journals, January 7, 2018

Abstract: This Review And Research Study Provides Convincing Arguments And Evidences Based On Experiments That The Electron And Hole Effective Masses In Thermal Silicon Dioxide Are 0.42m And 0.58m, Where M Is The Free Electron Mass. Only One Of The Masses Needs To Be Determined As The Electron And Hole Masses In Materials Add Up To Be Equal To Free Electron Mass With The Hole Effective Mass........

Keywords: Band Offsets, Effective Masses, MOS Device, Materials, Tunnelling

[1]. R.K. Chanana, K. McDonald, M. DiVentra, S.T. Pantelides, L.C. Feldman, G.Y. Chung, C.C. Tin, J.R. Williams, R.A. Weller, "Fowler-Nordheim hole tunnelling in p-SiC/SiO2 structures", Appl. Phys. Letts., 2000;77(16):2560-2562.
[2]. R.K. Chanana, "Determination of hole effective mass in SiO2 and SiC conduction band offset using Fowler-Nordheim tunnelling characteristics across metal-oxide-semiconductor structures after applying oxide field corrections", J. Appl. Phys., 2011;109:104508.
[3]. E.H. Nicollian, J.R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology, John Wiley and Sons, New York, 1982.
[4]. R.K. Chanana, "Theoretical finding of the properties of a Si (100) MOS device", IOSR-J. Applied Physics, 2022;14(3): 5-6.
[5]. R.K. Chanana, "N-channel 4H-SiC MOSFET device on (112̅0) oriented epitaxial surface", IOSR-J. Electrical and Electronics Engineering, 2022;17(3): 20-22.