Abstract:Leakage power has become a great challenge now a days. As the size of the device shrink the leakage power increases. So the leakage power is the very serious problem in CMOS chips. As we move towards the submicron technology the device consistency and the threshold voltage become smaller. When decreasing the supply voltage, the threshold voltage and the oxide thickness decreases due to this leakage increases. The main motivation of this work is to reduce the leakage of the SRAM. The circuit of the SRAM is designed by using different leakage reduction technique like sleep transistor technique, force stack technique, sleepy stack technique and simulated in the cadence virtuoso tool using 45nm,90nm,180nm process technology.
Keywords: SRAM, leakage power, submicron, threshold voltage, cadence tool.
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