Abstract: The oxide fixed charge density Nf and density of near interface traps DNIT has been calculated from reliable samples of 4H-SiC MOS devices in a collaborative effort. The Nf in the p-type MOS device equals the DNIT on the n-type MOS device after NO annealing of the wet oxide, indicating that they are a result of ionisation of deep traps formed due to neutral oxygen vacancies near the Si-rich 2-3 nm SiC/SiO2 interface region. The value of Nf is 23.6 x 1011/cm2. This is high and significantly contributes to limiting mobility of the n-channel MOSFET. The oxide breakdown......
Keywords: Deep Traps, Silicon Carbide FET, Conduction band, Mobility, Dielectric Breakdown field
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