Abstract: This article combines electrical and physical measurements to obtain and confirm the conduction
band offset and the oxide breakdown field in a MOS device fabricated on the n-type C-face of 4H-SiC having
(000-1) orientation. The device has the oxide grown by wet oxidation and wet re-oxidised in steam at 500oC to
1000oC for 10 min. The conduction band offset obtained is 2.92 eV relative to the SiO2 conduction band and is
0.14 eV larger than on the Si-face where it is determined earlier to be 2.78 eV. The oxide breakdown field at a
current density of 10-4A/cm2 with charges is a low value of 6.22 MV/cm and without charges is 8.24 MV/cm
when having the MOS device in accumulation......
Keywords: Offset, Oxide breakdown field, Silicon Carbide, metal-oxide-semiconductor, XPS
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