Abstract: 5G wireless development is in constant activity. The performance of a radio input module is increasingly critical in the radio frequency signal path, especially those involving the amplifier. This article discusses the design of a transistor amplifier for 5G wireless applications The Transistor used for said amplifier is a FET designed by Alpha Industries named sp_aiiAF035P1_00_19941209 with voltage Vds = 5V, Ids = 70mA. The design of the amplifier is made with the ADS (Advanced Design System) software we used the micro-ribbon lines for the assembly of our amplifier they are printed on the Rogers Duriod 5880 substrate with a thickness of 0.127 mm and a relative permittivity of 2.2 . The technique of impedance adaptations is made by a stub favoring the transfer of maximum power from the input to the output........
Key Word: ADS; Amplifier; FET; Gain; Transistor.
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