Paper Type |
: |
Research Paper |
Title |
: |
Effect of Piezoelectric polarization on Open Circuit Voltage of GaN/InGaN MQW Solar Cell |
Country |
: |
India |
Authors |
: |
Manoj Thosar, R. K. Khanna, Saurabh Khandelwal, Shubham Faujdar |
|
: |
10.9790/1676-09255356 |
Abstract: The piezoelectric polarization effect is dominant at the every GaN/InGaN interface in the MQW structure. In this paper we show that, how this piezoelectric polarization effect is useful in improving the open circuit voltage of GaN/InGaN MQW solar cell. For this purpose we have design a mathematical model of GaN/InGaN MQW solar cell and calculate the values of open circuit voltage with and without piezoelectric polarization effect. For simplicity of the model we are neglecting the current clouding effect, composition fluctuation and electro migration effect present in the device. Here we also assuming that, all the layers of GaN and InGaN material are terminated by Ga-face. Results indicate that the open circuit voltage of MQW solar cell improves by ~6.28% (at indium fraction in quantum well is 0.2 and quantum well thickness is 1 nm) and by ~16.77% (at indium fraction in quantum well is 0.2 and quantum well thickness is 3 nm) by using piezoelectric polarization effect.
Keywords: Dislocation density, Ga-face GaN and InGaN layer, Gallium nitride (GaN), Indium gallium nitride (InGaN), Multi quantum well (MQW), piezoelectric polarization.
[1] O. Jani, C. Honsberg, Y. Huang, J. O. Song, I. Ferguson, G. Namkoong, E. Trybus, A. Doolittle, S. Kurtz, "Design, Growth, Fabrication and Characterization of High-Band Gap InGaN/GaN Solar Cells", Proc. of the IEEE 4th World Conference on Photovoltaic Energy Conversion, Waikoloa, Hawaii, May 7-12, 2006.
[2] Y. Nanishi, Y. Saito and T. Yamaguchi, "R-F Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys", Jpn. J. Appl. Phys., 42 (2003), p. 2549.
[3] F. Bernardini, and V. Fiorentini, "Nonlinear Macroscopic Polarization in III-V Nitride Alloys", Phys. Rev. B, 64 (2001), p. 085207/1.
[4] V. Fiorentini F. Bernardini, "Spontaneous versus Piezoelectric Polarization in III-V Nitrides: Conceptual Aspects and Practical Consequences", Phys. Stat. Sol. B, 216 (1999), p. 391.
[5] O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy,W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W.Rieger, and J. Hilsnbeck, "Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures," J. Appl. Phys. 85 (1999), p. 3222.